i c , nom 50 a i c 75 a min. typ. max. - 1,7 2,15 v - 2,0 - v i2t value i2t v ge(th) c ies na gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i ges - 400 6,5 - - - 5 0,13 - v nf 3,50 - 0,47 - c a dc forward current + 20 700 a2s t p = 1ms i frm 100 a grenzlastintegral 100 dauergleichstrom i f 50 t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom w v gate emitter peak voltage t c = 25c dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage t vj = 25c 1200 v elektrische eigenschaften / electrical properties i c = 50a, v ge = 15v, t vj = 125c gate schwellenspannung i c = 2,0ma, v ce = v ge , t vj = 25c gate threshold voltage periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; robert severin v r = 0v, t p = 10ms, t vj = 125c technische information / technical information fs50r12ke3 igbt-module igbt-modules v ces a isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. v isol i crm p tot 270 repetitive peak forward current kv 2,5 5,0 5,8 transistor wechselrichter / transistor inverter date of publication: 2002-09-03 kollektor emitter s?ttigungsspannung i c = 50a, v ge = 15v, t vj = 25c collector emitter saturation voltage v ges revision: 3.0 eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v prepared by: mod-d2; m. mnzer collector emitter cut off current i ces rckwirkungskapazit?t reverse transfer capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v kollektor emitter reststrom c res ma - v ce = 1200v, v ge = 0v, t vj = 25c gateladung v ge = -15v...+15v q g - gate charge nf - 1 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules min. typ. max. - 0,09 - s - 0,09 - s - 0,03 - s - 0,05 - s - 0,42 - s - 0,52 - s - 0,07 - s - 0,09 - s - 1,65 2,15 v - 1,65 - v - 67 - a - 70 - a - 5,6 - c - 9,9 - c - 2,2 - mj - 4,1 - mj sperrverz?gerungsladung recovered charge i f = 50a, -di f /dt= 1900a/s kurzschlussverhalten t p 10s, v ge 15v, t vj 125c i sc - 200 - a sc data v cc = 900v, v cemax = v ces - l ce di/dt einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls fallzeit (induktive last) fall time (inductive load) v ge = 15v, r g = 18 ? , t vj = 25c v ge = 15v, r g = 18 ? , t vj = 125c - nh stray inductance module modulinduktivit?t l ce - diode wechselrichter / diode inverter 2,5 q r ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 50a, -di f /dt= 1900a/s 19 turn off energy loss per pulse e off i c = 50a, v cc = 600v, l = 70nh v ge = 15v, r g = 18 ? , t vj = 125c - 6,5 leitungswiderstand, anschluss-chip lead resistance, terminal-chip r cc/ee t c = 25c - mj - mj e on i c = 50a, v cc = 600v, l = 70nh v ge = 15v, r g = 18 ? , t vj = 125c i c = 50a, v cc = 600v t d,off v ge = 15v, r g = 18 ? , t vj = 25c v ge = 15v, r g = 18 ? , t vj = 125c i c = 50a, v cc = 600v m ? charakteristische werte / characteristic values i c = 50a, v cc = 600v v ge = 15v, r g = 18 ? , t vj = 25c - - t f v ge = 15v, r g = 18 ? , t vj = 25c v ge = 15v, r g = 18 ? , t vj = 125c - 5,0 v r = 600v, v ge = -15v, t vj = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm charakteristische werte / characteristic values i f = 50a, v ge = 0v, t vj = 25c i f = 50a, v ge = 0v, t vj = 125c einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 18 ? , t vj = 125c abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 50a, v cc = 600v t r v r = 600v, v ge = -15v, t vj = 25c i f = 50a, -di f /dt= 1900a/s durchlassspannung 2 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules min. typ. max. - - 0,45 k/w - - 0,75 k/w mm clearence distance luftstrecke mm creepage distance kriechstrecke this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter r thjc mechanische eigenschaften / mechanical properties nm anzugsdrehmoment, mech. befestigung mounting torque t vj op mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. 125 c c t stg -40 - 125 lagertemperatur storage temperature -- -40 - c 20 mw 150 - b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 k/w - 0,02 - 3375 - k - - charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance deviation of r 100 b-value % pro modul / per module paste = 1w/m*k / grease = 1w/m*k operation temperature maximum junction temperature betriebstemperatur r thck thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. bergangs w?rmewiderstand t vj max verlustleistung t c = 100c, r 100 = 493 ? ? r/r t c = 25c p 25 power dissipation -5 abweichung von r 100 r 25 - k ? thermische eigenschaften / thermal properties -5 - 5 comperative tracking index gewicht schraube / screw m5 al 2 o 3 10,0 7,5 innere isolation case, see appendix geh?use, siehe anlage internal insulation cti 225 m 3 - 6 g weight g 180 3 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules a usgangs k enn li n i e (t yp i sc h) i c = f(v ce ) output characteristic (typical) t vj = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 v ce [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules b er t ragungsc h ara kt er i s tik (t yp i sc h) transfer characteristic (typical) i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) 0 10 20 30 40 50 60 70 80 90 100 456789101112 v ge [v] i c [a] tvj=25c tvj=125c 0 10 20 30 40 50 60 70 80 90 100 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge =15v, r g =18 ? , v ce =600v, t vj =125c schaltverluste (typisch) switching losses (typical) e on = f(r g ), e off = f(r g ), e rec = f(r g ) v ge =15v, i c =50a, v ce =600v, t vj =125c 0 2 4 6 8 10 12 14 0 102030405060708090100 i c [a] e [mj] eon eoff erec 0 2 4 6 8 10 12 14 0 1020304050607080 r g [ ? ] e [mj] eon eoff erec 6 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules 2,345e-03 transienter w?rmewiderstand z thjc = f (t) 3 2,032e-01 2,820e-02 1,128e-01 2,820e-01 sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g =18 ? , t vj =125c i r i [k/w] : igbt i [s] : igbt r i [k/w] : diode i [s] : diode 1 5,077e-02 7,662e-01 7,637e-02 3,333e-03 4,933e-01 3,429e-02 1,421e-01 1,294e-01 4,501e-02 1,142e-01 2 7,893e-02 4 transient thermal impedance 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode 0 25 50 75 100 125 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
technische information / technical information fs50r12ke3 igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_fs50r12ke3_ 3.0.xls 2002-09-03
|
